Gas source silicon molecular beam epitaxy using disilane

Abstract

In gas source silicon molecular beam epitaxy (MBE) using disilane, good crystal quality silicon epitaxial films were obtained at a temperature as low as 630 °C. In comparison with gas source Si-MBE using silane, a growth rate several times higher was attained. Boron doping in the gas source Si-MBE was also studied. Using HBO2 as the B-doping source, the doping level was controlled in the range of 1016–1018 cm−3 by the cell temperature. Because of the low growth temperature and the high growth rate, an abrupt doping profile was obtained.