Publication | Closed Access
Electrical and structural characteristics of Ge-doped GaN thin films and its hetero-junction diode made all by RF reactive sputtering
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Citations
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References
2017
Year
Materials ScienceRf Reactive SputteringElectrical EngineeringStructural CharacteristicsHetero-junction DiodeEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceGallium OxideThin FilmsMicroelectronicsCategoryiii-v Semiconductor
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