Thin-film deposition using low-energy ion beams (3) Mg+ ion-beam deposition and analysis of deposits

Abstract

The energy dependence of the growth characteristics of Mg thin films on C substrates deposited by retarding a 4-keV mass-analyzed ion beam of Mg+ ions to a range of energies between 24 and 500 eV has been studied by Rutherford backscattering analysis and scanning electron microscopy. An incident Mg+ beam energy of about 100 eV produced the optimum film in the shortest time when space-charge spreading of the beam at low energies is compared with self-sputtering of the deposit at the higher energies. The adhesion of the films is energy dependent and improves at higher energies. This is thought to be due to deeper penetration of the Mg+ ions into the C substrates above 100 eV.