Circuit-Based Electrothermal Modeling of SiC Power Modules With Nonlinear Thermal Models

Abstract

Silicon carbide (SiC) power devices have the potential to operate at high temperatures beyond the capabilities of silicon power devices. At increased temperatures, the temperature-dependent material properties of the SiC die and the package multilayer structure can influence the electrothermal (ET) device performance. In this article, a new step-back-correction technique implemented in a finite-difference-method-based thermal modeling tool is proposed to reduce the computational cost while maintaining a good accuracy of ET simulations for multichip power modules. The simulations take the temperature dependence of the thermal conductivity <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$k(T)$</tex-math></inline-formula> and both conduction and switching losses into account. The importance of considering <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$k(T)$</tex-math></inline-formula> for the accurate temperature prediction of SiC power devices is demonstrated for thermal impedance evaluations characterized by high-temperature swings, as well as for a 100-kHz boost converter with low device temperature amplitudes in the steady state. The proposed ET modeling is validated by COMSOL simulations and infrared camera measurements on an example of a custom-designed and custom-manufactured half-bridge SiC power module.