Numerical simulation of the NiO as hole transport layer in CH₃NH₃PbBr₃ perovskite based-solar cell using SCAPS-1D

Abstract

With the SCAPS-1D simulator, a full digital simulation and modeling on the perovskite solar cell was performed using the perovskite methylammonium lead tribromide material MAPbBr <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> for various parameters such as open circuit voltage (V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">oc</inf> ), fill factor (FF), power conversion efficiency (PCE) and short-circuit current density (J <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">sc</inf> ). The electronic properties of the MAPbBr <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> material used as the active layer were calculated. The effects of NiO layer concentration, MAPbBr <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> layer thickness and temperature on photovoltaic parameters on perovskite solar cell (n-ITO/ n-PCBM (ETL)/ p-MAPbBr <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> /p-NiO (HTL)) were examined. The simulation of the solar cell based on perovskite MAPbBr <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> allowed us to find the following values <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(\mathrm{V}_{\text{oc}}=1.0476\ \mathrm{V},\ \mathrm{J}_{\text{sc}}=7.9745\ \text{mA}/\text{cm}^{2},\ \text{FF}= 77.85\%,\ \text{PCE}=6.5\%$</tex> ). Our results were compared with published experimental values and also simulated by SCAPS-1D, and they showed good agreement.