Wake-up free Hf0.5Zr0.5O2 thin film with enhanced ferroelectricity and reliability synthesized by atomic layer crystallization induced by substrate biasing - Concepedia

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Wake-up free Hf0.5Zr0.5O2 thin film with enhanced ferroelectricity and reliability synthesized by atomic layer crystallization induced by substrate biasing

13

Citations

37

References

2022

Year

Chun-Yi Chou, Hsing-Yang Chen, Yu‐Sen Jiang, Hsin-Chih Lin, Miin‐Jang Chen

Acta Materialia

Materials ScienceFerroelasticsEngineeringFerroelectric ApplicationOxide ElectronicsApplied PhysicsSubstrate BiasingAtomic Layer CrystallizationFunctional MaterialsEnhanced Ferroelectricity

References

	Year	Citations

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