Realization of the electric-field driven “one-material”-based magnetic tunnel junction using van der Waals antiferromagnetic MnPX₃ (X: S, Se)

Abstract

Using electron or hole doping, the top layer of a van der Waals MnPX 3 (X: S, Se) material can be converted to the half-metallic ferromagnetic state with the underlying layers remaining in the insulating antiferromagnetic state.