Sub-10 nm Top Width Nanowire InGaAs Gate-All-Around MOSFETs With Improved Subthreshold Characteristics and Device Reliability

Abstract

In this article, sub-10 nm top width nanowire In <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.53</sub> Ga <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.47</sub> As gate-all-around (GAA) MOSFETs with improved subthreshold characteristics and reliability are demonstrated. These devices exhibit a significant improvement in the subthreshold performances with subthreshold swing (SS) of 70 mV/dec, drain induced barrier lowering (DIBL) of 46 mV/V, and off-current ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{I}_{\mathrm{ off}}$ </tex-math></inline-formula> ) of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.6 \times 10^{-4} \mu \text{A}/\mu \text{m}$ </tex-math></inline-formula> for InGaAs GAA MOSFETs. Effective control of short channel effects (SCEs) is confirmed by the error bar of statistical variation analysis. Under gate bias stress, a low degradation of SS and threshold voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text{V}_{\mathrm{ th}}$ </tex-math></inline-formula> ) shift has been achieved due to N <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> RP treatment of the InGaAs GAA MOSFETs. The superior performance can be attributed to the strong electrostatic control and high quality of high- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula> /InGaAs interface, originating from shrinking nanowire width and RP passivation effects. These results show the developed GAA MOSFET devices have good potential for future low-power high-switching speed CMOS logic applications.