ACS Nano · 2021 · 133 citations · 48 references
Natural SciencesMaterials EngineeringMaterials ScienceElectronic MaterialsSemiconductor DevicesSemiconductor MaterialsMetalsNanostructured Electronic MaterialsSemiconductor NanomaterialsSemiconductor SurfacesSurface PhysicsTwo-dimensional SemiconductorsCarrier ConcentrationFermi FunctionFermi LevelPlasma TreatmentSynthesis Of Monolayer SemiconductorsTransition Metal DichalcogenidesTwo-dimensional HeterostructuresUnit Cell Parameters
) and the Fermi level (∼ - 4.11 eV), have been systematically investigated by the combination of FET device study, KPFM, and DFT calculations. The results demonstrate a method for the creation of Janus MoSH and present the essential electronic parameters which have great significance for device applications. Furthermore, owing to the metallicity, 2D Janus MoSH might be a potential platform to observe the SPR behavior in the mid-infrared region.
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Two-dimensional gas of massless Dirac fermions in graphene
Kostya S. Novoselov, A. K. Geǐm, Da Jiang et al. · Nature · 2005 · 21.4K citations · Full text
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
Manish Chhowalla, Hyeon Suk Shin, Goki Eda et al. · Nature Chemistry · 2013 · 9.8K citations
Emerging Photoluminescence in Monolayer MoS<sub>2</sub>
Andrea Splendiani, L. Sun, Yuanbo Zhang et al. · Nano Letters · 2010 · 9.4K citations
Janus monolayers of transition metal dichalcogenides
Ang‐Yu Lu, Hanyu Zhu, Jun Xiao et al. · Nature Nanotechnology · 2017 · 2.4K citations
Band offsets and heterostructures of two-dimensional semiconductors
Jun Kang, Sefaattin Tongay, Jian Zhou et al. · Applied Physics Letters · 2013 · 1.7K citations