Wafer‐Scale InN/In₂S₃ Core–Shell Nanorod Array for Ultrafast Self‐Powered Photodetection

Abstract

Abstract Self‐powered photodetectors have paved the way for electronic applications in fields such as civilian communication, infrared mapping, and industrial automatic control. However, most self‐powered photodetectors have faced photoresponse‐speed and device‐scale bottlenecks. Herein, a novel, self‐powered detector with an ultrafast response speed based on a core–shell InN/In 2 S 3 nanorod array is proposed. A wafer‐scale InN/In 2 S 3 nanorod array with good homogeneity is synthesized on Si substrates via a simple two‐step method involving molecular beam epitaxy and chemical vapor deposition. The photodetector device exhibits excellent self‐powered properties and a high current on/off ratio of 5 × 10 3 . Further analyses determined that the device have an excellent photovoltaic responsivity and detectivity of 140 mA·W −1 and 4.0 × 10 10 Jones, respectively (0 V). Impressively, the device exhibits an ultrafast photoresponse with a rise/fall time of 22/32 µs. The self‐powered InN/In 2 S 3 photodetector with an ultrafast response speed shows superior potential for electronic applications. The core–shell nanostructure hybrid heterojunction introduces a novel idea for wafer‐scale nano‐photodetectors.