Bulletin of Electrochemistry · 2002 · 17 citations · 4 references
Natural SciencesChemistryMaterials ScienceElectronic MaterialsMaterials ChemistrySemiconductor MaterialsCompound SemiconductorsElectrode MaterialsPhotovoltaic MaterialsSemiconducting MaterialsSolar Cell MaterialsSolar CellsChalcogenide Thin FilmsEnergy Storage ElectrodesInorganic SemiconductorsMetal Sulfide Thin FilmsOrthorhombic SystemPhotoelectrochemical CellsSemiconducting Metal SulfidesUnit Cell Geometry
Thin film semiconducting metal chalcogenides have tailorable properties to use them as storage electrodes in the rechargeable photoelectrochemical solar energy storage cells. Amongst IV-VI semiconducting compounds, tin chalcogenides exhibit an orthorhombic structure with eight atoms per unit cell forming double layer planes normal to the longest axis. The material properties of the layered semiconductors tin selenide (SnSe), tin sulfide (SnS) and tin sulfoselenide (SnSSe) prepared by different methods are presented in this review
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