Publication | Closed Access
Investigation and modeling of impact ionization with regard to the RF- and noise behaviour of HFET
16
Citations
16
References
2002
Year
Unknown Venue
EngineeringRadio FrequencyElectronic PropertiesSemiconductor DeviceElectromagnetic CompatibilityRf SemiconductorNanoelectronicsElectronic EngineeringNoiseHeterostructure Field-effect TransistorsIon EmissionElectrical EngineeringPhysicsBias Temperature InstabilityImpact IonizationMicroelectronicsNoise Equivalent CircuitApplied PhysicsOptoelectronics
A new small-signal and noise equivalent circuit for Heterostructure Field-Effect Transistors (HFET), including the influence of impact ionization and gate-leakage current on the electronic properties, is presented. The capability of the new model is demonstrated by bias-dependent investigations of the RF- and noise behaviour of InAlAs-InGaAs-InP HFET.
| Year | Citations | |
|---|---|---|
Page 1
Page 1