Preparation of all-oxide <i>β</i> -Ga ₂ O ₃ / <i>α</i> -MoO ₃ heterojunction towards self-driven deep ultraviolet photosensor

Abstract

Abstract A self-driven all-oxide β -Ga 2 O 3 / α -MoO 3 heterojunction solar-blind ultraviolet (UV) photodetector is introduced in this work. The photodetector shows photo responsivity (R) of 0.59 mA W −1 , specific detectivity (D*) of 10 11 Jones and linear dynamic region (LDR) of 162.9 dB at 10 V, and R of 0.26 mA W −1 , D* of 4 <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" overflow="scroll"> <mml:mo>×</mml:mo> <mml:mspace width=".25em"/> </mml:math> 10 10 Jones and LDR of 89.44 dB at −10 V. In addition, it could also operate repeatably and stably at zero bias, illustrating that it is a self-driven photodetector. In one word, the fabricated β -Ga 2 O 3 / α -MoO 3 heterojunction has a potential to work as a self-driven solar-blind UV sensing device.