Effective Modulation of GaN-on-Si LED via Indigenous MOSFET Engineering

Abstract

In this article, we realize an effective modulation of GaN-on-Si light-emitting diode (LED) via an indigenous MOSFET based on a standard commercial LED epitaxial (epi) wafer. With the benefit of no epi regrowth, the MOSFET was directly fabricated on the LED epi layer, providing a facile method of cost-effective fabrication. The drain of the MOSFET was connected to the cathode of the LED by sharing the n-GaN layer to lessen parasitic effects. A tetramethylammonium hydroxide (TMAH) solution was used to smoothen the sidewall of the gate-recess. The measurements showed that the MOSFET effectively modulated the output current, light output power (LOP), and the peak value of the light intensity of the integrated LED. We anticipate that such an approach could have potential applications for visible light communication (VLC) and micro-LED display.