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High Sensitive and Broadband Photodetectors Based on Hybrid PbI<sub>2</sub> Nanosheet/CdSe Nanobelt
20
Citations
45
References
2021
Year
EngineeringSemiconductor MaterialsOptoelectronic DevicesSemiconductor NanostructuresSemiconductorsIi-vi SemiconductorPhotoelectric SensorElectronic DevicesPhotodetectorsHigh SensitiveBroadband PhotodetectorsCompound SemiconductorElectrical EngineeringPhotoluminescenceOptoelectronic MaterialsVisible Light HindersPhotoelectric MeasurementSingle Pbi 2Pbi 2Applied PhysicsOptoelectronics
Abstract The limited detection of lead iodide (PbI 2 ) to visible light hinders the further development of PbI 2 in the field of optoelectronic applications. A photodetector based on PbI 2 nanosheet/CdSe nanobelt (PbI 2 NS/CdSe NB) is prepared for the first time. This composite structure exhibits broadband spectral photoresponse from ultraviolet (400 nm) to red (730 nm). More importantly, PbI 2 NS/CdSe NB can promote the effective separation of electron–hole pairs and improve the photoelectric performance. Compared to single PbI 2 NS, the PbI 2 NS/CdSe NB photodetector exhibits higher light–dark current ratio (6.778 × 10 3 A), responsivity (347.57 A W −1 ), and detectivity (3.625 × 10 15 Jones) under 490 nm illumination. A new strategy is provided here to design broadband and high‐performance photodetectors.
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