Monolithic Integration of a 5-MHz GaN Half-Bridge in a 200-V GaN-on-SOI Process: Programmable dv/dt Control and Floating High-Voltage Level-Shifter

Abstract

This paper presents key building blocks of a monolithic GaN half-bridge solution: 1) a binary-weighted digitally-controlled segmented gate-driver, offering slew-rate control; 2) a high-voltage floating level-shifter with glitch prevention; and 3) a monolithic half-bridge with integrated fixed-strength gate-drivers. Together, they facilitate on-chip active gate-driving, improving the reliability of GaN power ICs. The blocks were fabricated on separate dies using imec’s 200 V GaN-on-SOI process. A controllable dv <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</inf> /dt from 68 V/ns to 112 V/ns at room temperature is achieved using the segmented gate-driver. An oscillation-free v <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">DS</inf> switching of the half-bridge at 200 V and 5 MHz is demonstrated through experimental results.