Photogating-driven enhanced responsivity in a few-layered ReSe₂ phototransistor

Abstract

The paper presents a thorough investigation of photoconductive properties of few layers of rhenium diselenide (ReSe 2 ). A correlation between responsivity ( R ) and power exponent ( γ ) indicates localized trap states plays a crucial role in photocurrent generation, commonly known as photogating. These trap states can be modulated by external factors such as temperature and gate voltage.