Optical modulator based on a silicon-ITO grating embedded rib structure with a tunable group delay

Abstract

An optical modulator based on an engineered silicon-indium tin oxide (Si-ITO) structure is proposed with a tunable group delay. A large group delay is reported by slowing down the light in a Si-ITO grating embedded rib structure. Optical modulation and a tunable group delay are realized by utilizing the electrically tunable permittivity of ITO in the engineered waveguide. The extinction ratio over 8 dB for a 10 µm long device and the modulation efficiency around 12 V-µm are reported for a wide wavelength from 1530 to 1570 nm. The resulting modulation efficiency and the extinction ratio show a significant improvement as compared to conventional modulators based on rib waveguides. We also report around 82 psec electrical tuning in the group delay for a wide wavelength range. This concept is promising in view of realizing tunable delay lines, along with slow light modulators with a reduced device footprint and low energy dissipation.