Comprehensive Study on Electrical Characteristics in 1.2 kV SiC SBD-integrated Trench and Planar MOSFETs

Abstract

This study investigated the static and dynamic characteristics of a 1.2 kV SiC SBD-integrated trench MOSFET (SWITCH-MOS) and an SBD-integrated planar MOSFET. The SWITCH-MOS exhibited superior switching characteristics to the planar type MOSFET, while showing low specific on-resistance (R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on,sp</sub> ). This is because the SWITCH-MOS has an SBD-wall trench structure and larger SBD area per unit cell than the planar type MOSFET, and the unipolar operation of the embedded SBD in the SWITCH-MOS can be maintained even at high current under high temperature. In addition, the SWITCH-MOS has smaller C <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">rss</sub> owing to the p+ regions at trench gate bottom, resulting in higher dV <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ds</sub> /dt during both turn-on and turn-off operations. Furthermore, the SWITCH-MOS showed superior R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on,sp</sub> - SCSOA trade-off characteristics.