Structural and electronic properties of N-doping ultra-small diameter (3,3) armchair SWCNT by using PBE and TB-mBJ potentials - Concepedia

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Structural and electronic properties of N-doping ultra-small diameter (3,3) armchair SWCNT by using PBE and TB-mBJ potentials

17

Citations

57

References

2021

Year

R. Takassa, O. Farkad, E.A. Ibnouelghazi, D. Abouelaoualim

Applied Surface Science

Materials ScienceMaterials EngineeringElectrical EngineeringTransition Metal ChalcogenidesEngineeringNanoelectronicsOxide ElectronicsApplied PhysicsTb-mbj PotentialsSemiconductor MaterialElectronic PropertiesArmchair Swcnt

References

	Year	Citations

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