Imaging Array and Complementary Photosensitive Inverter Based on P-Type SnO Thin-Film Phototransistors

Abstract

P-type tin monoxide (SnO) thin-film phototransistors were developed with high photoresponsivity of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$2.94\times 10^{{5}}$ </tex-math></inline-formula> A/W and high detectivity of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$1.82\times 10^{{14}}$ </tex-math></inline-formula> Jones, and these values are, to the best of our knowledge, among the highest for the reported oxide-semiconductor-based phototransistors. The excellent performances of these phototransistors were further demonstrated by incorporating the devices into a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${10}\times {10}$ </tex-math></inline-formula> array to successfully image a letter “A” pattern. Furthermore, by integration of n-type indium gallium zinc oxide and p-type SnO thin-film phototransistors, we realized a complementary photosensitive inverter. The inverter exhibits excellent photoresponse with a high voltage gain rate change of 194%. Our results indicates that the SnO based phototransistors have great potential in thin-film photoelectronic circuits and systems.