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Anomalous resistive switching in memristors based on two-dimensional palladium diselenide using heterophase grain boundaries

EngineeringPhysicsAnomalous Resistive SwitchingNanoelectronicsTwo-dimensional Palladium DiselenideApplied PhysicsMultilayer HeterostructuresHeterophase Grain BoundariesPhase Change MemoryTopological HeterostructuresSemiconductor Device