Publication | Closed Access

Extremely scaled gate-first high-k/metal gate stack with EOT of 0.55 nm using novel interfacial layer scavenging techniques for 22nm technology node and beyond

Materials ScienceTechnology NodeElectrical EngineeringEngineeringNanoelectronicsNanotechnologyApplied PhysicsSilicon On InsulatorMicroelectronicsBeyond CmosNovel Interfacial LayerSemiconductor Device