Silicon electro-optic micro-modulator fabricated in standard CMOS technology as components for all silicon monolithic integrated optoelectronic systems ^*

TLDR

Si field‑effect LEDs could be integrated into micro‑photonic systems. The study investigates the optoelectronic characteristics and switching behavior of a monolithically integrated silicon LED operating from 400–900 nm. By comparing avalanche‑based and field‑effect geometries within the same device, the authors determine how LED dimensions influence switching speed. The field‑effect LED exhibits an almost‑linear modulation curve with reduced distortion and enhanced light output, matching TCAD simulations, and supports ON–OFF keying at GHz frequencies.

Abstract

Abstract In this paper, optoelectronic characteristics and related switching behavior of one monolithically integrated silicon light-emitting device (LED) with an interesting wavelength range of 400–900 nm are studied. Through the comparison of two types of geometry, Si avalanche-based LED and Si field-effect LED (Si FE LED), in the same device, we establish the dimensional dependence of the switching speed of the LED. Almost-linear modulation curve implies lower distortion is shown for the Si FE LED with light emission enhancement, and technology computer aided design (TCAD) simulations are in line with the experimental results. Our findings indicate that ON–OFF keying up to GHz frequencies should be feasible with such diodes. Potential applications should include Si FE LED integrated into the micro-photonic systems.