Seeded 2D epitaxy of large-area single-crystal films of the van der Waals semiconductor 2H MoTe ₂

Abstract

The integration of two-dimensional (2D) van der Waals semiconductors into silicon electronics technology will require the production of large-scale, uniform, and highly crystalline films. We report a route for synthesizing wafer-scale single-crystalline 2H molybdenum ditelluride (MoTe₂) semiconductors on an amorphous insulating substrate. In-plane 2D-epitaxy growth by tellurizing was triggered from a deliberately implanted single seed crystal. The resulting single-crystalline film completely covered a 2.5-centimeter wafer with excellent uniformity. The 2H MoTe₂ 2D single-crystalline film can use itself as a template for further rapid epitaxy in a vertical manner. Transistor arrays fabricated with the as-prepared 2H MoTe₂ single crystals exhibited high electrical performance, with excellent uniformity and 100% device yield.