Low-current perpendicular domain wall motion cell for scalable high-speed MRAM - Concepedia

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Low-current perpendicular domain wall motion cell for scalable high-speed MRAM

104

Citations

0

References

2009

Year

Fukami, Suzuki, Nagahara, Ohshima, Ozaki, Saito, Nebashi, Sakimura, Honjo, Mori,

Unknown Venue

SpintronicsElectrical EngineeringNon-volatile MemoryEngineeringComputer EngineeringMagnetoresistive Random-access MemoryMemory DeviceSemiconductor MemoryMagnetic DeviceMicroelectronicsScalable High-speed Mram

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