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High-frequency modulation of 1.52 μm vapour-phase-transported InGaAsP lasers
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1985
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PhotonicsEngineeringLaser ScienceHigh-frequency ModulationSemiconductor LasersOptical PropertiesDb BandwidthApplied PhysicsLaser ApplicationsLaser PhysicsParasitic CapacitanceLaser MaterialMicrowave PhotonicsOptoelectronicsHigh-power LasersVapour-phase-transported Laser Structure
We describe modifications to the recently demonstrated vapour-phase-transported laser structure to reduce the parasitic capacitance by an order of magnitude, and increase the 3 dB bandwidth for CW 1.52 μm lasers to 8 GHz. The parasitic and nonlinear limitations to this bandwidth are discussed.