Gas-mediated liquid metal printing toward large-scale 2D semiconductors and ultraviolet photodetector

Abstract

Abstract A gas-mediated fabrication of centimeter-scale two-dimensional (2D) semiconductors and ultraviolet photodetector by a liquid metal-based printing was reported. Various large-scale 2D materials (Ga 2 O 3 , In 2 O 3 , SnO) were demonstrated to be directly printed at ambient air on different substrates. Such printing represents a generic, fast, clean, and scalable technique to quickly manufacture 2D semiconductors. The electrical properties were explored to quantify the printed 2D films, which were somewhat deficient in previous studies. In particular, to explore and facilitate the advantages of this 2D semiconductor in functional electronic applications, strategies for realizing fully printed Ga 2 O 3 /Si heterojunction photodetector via low-temperature and low-cost processes were developed. The device exhibits excellent sensibility and rapid photoresponse times. This work offers feasible way to develop high-performance ultraviolet photodetector for mass production. It also suggests a promising direction for making large-scale 2D photoelectronic and electronic systems and is expected to be extensively useful in the coming time.