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3D-MAPS: 3D Massively parallel processor with stacked memory
117
Citations
5
References
2012
Year
Unknown Venue
EngineeringComputer ArchitectureComputer-aided DesignIntegrated CircuitsMulti-channel Memory Architecture3D MemoryAdvanced Packaging (Semiconductors)Parallel ComputingManycore ProcessorGeometric ModelingMassively-parallel Computing3D Ic ArchitectureComputer EngineeringMulticore ProcessorMemory StackingComputer ScienceMicroelectronics3D PrintingThree-dimensional Heterogeneous IntegrationNatural SciencesMany-core ArchitectureParallel ProgrammingTechnologyThree-dimensional Integrated Circuits3D IntegrationStacked Memory
Several recent works have demonstrated the benefits of through-silicon-via (TSV) based 3D integration [1–4], but none of them involves a fully functioning multicore processor and memory stacking. 3D-MAPS (3D Massively Parallel Processor with Stacked Memory) is a two-tier 3D IC, where the logic die consists of 64 general-purpose processor cores running at 277MHz, and the memory die contains 256KB SRAM (see Fig. 10.6.1). Fabrication is done using 130nm GlobalFoundries device technology and Tezzaron TSV and bonding technology. Packaging is done by Amkor. This processor contains 33M transistors, 50K TSVs, and 50K face-to-face connections in 5×5mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> footprint. The chip runs at 1.5V and consumes up to 4W, resulting in 16W/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> power density. The core architecture is developed from scratch to benefit from single-cycle access to SRAM.
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