2012 · 117 citations · 5 references
EngineeringComputer EngineeringComputer ScienceComputer ArchitectureMicroelectronicsSemiconductor DevicesMemory Subsystem DesignMulticore Processor DesignParallel Architectures3D Integrated Circuits3D Stacked MemoryMulticore ArchitecturesMulticore Processor ArchitectureStackingThree-dimensional Integrated Circuit LayoutThree-dimensional IntegrationTwo-tier Architecture
Several recent works have demonstrated the benefits of through-silicon-via (TSV) based 3D integration [1–4], but none of them involves a fully functioning multicore processor and memory stacking. 3D-MAPS (3D Massively Parallel Processor with Stacked Memory) is a two-tier 3D IC, where the logic die consists of 64 general-purpose processor cores running at 277MHz, and the memory die contains 256KB SRAM (see Fig. 10.6.1). Fabrication is done using 130nm GlobalFoundries device technology and Tezzaron TSV and bonding technology. Packaging is done by Amkor. This processor contains 33M transistors, 50K TSVs, and 50K face-to-face connections in 5×5mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> footprint. The chip runs at 1.5V and consumes up to 4W, resulting in 16W/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> power density. The core architecture is developed from scratch to benefit from single-cycle access to SRAM.
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Neuromorphic vision chip fabricated using three-dimensional integration technology
Mitsumasa Koyanagi, Yasuo Nakagawa, Kangwook Lee et al. · 2002 · 114 citations
8Gb 3D DDR3 DRAM using through-silicon-via technology
Uksong Kang, Hoeju Chung, Seongmoo Heo et al. · 2009 · 73 citations
Engineering, Computer Engineering, Electrical Engineering +17
Design issues and considerations for low-cost 3D TSV IC technology
Geert Van der Plas, Paresh Limaye, A. Mercha et al. · 2010 · 61 citations
Engineering, Computer Engineering, Electrical Engineering +16