Design of a Low-Power Short-Channel Electrostatically Doped Silicene Nanoribbon FET

Abstract

In this article, the transfer and output characteristics of an electrostatically doped (ED) 4-armchair silicene nanoribbon (4-ASiNR) field-effect transistor (FET) with three gates are investigated. The numerical simulations are carried out based on the self-consistent solution of the Poisson and Schrödinger equations within the nonequilibrium Green's function (NEGF) formalism, implemented in the NanoTCAD ViDES simulator. Results show that ED SiNR-FET has better characteristics than chemically doped (CD) SiNR-FET. Additionally, ED-device is inherently free of negative impacts of impurities on the transistor's performance. The ED SiNR-FET functionality is analyzed using different channel lengths, introducing the extended channel ED-device (ECED) with an improved I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> \scriptscriptstyle ON</sub> / I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> \scriptscriptstyle OFF</sub> ratio of 3.8×10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> and a significant I <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> \scriptscriptstyle ON</sub> of 4.6 mA/ μ m. A 15 nm ECED SiNR-FET with an 8 nm channel is studied under different temperatures and supply voltages. Based on the results, low-power (LP) and high-performance (HP) applications are suggested for the ECED-device, with the minimum subthreshold swing of 64 mV/dec and the maximum transconductance of 63 μS, respectively.