Enhanced light extraction from AlGaInP-based red light-emitting diodes with photonic crystals

Abstract

The photonic crystal (PC) has been demonstrated to be very effective in improving the extraction efficiency of light-emitting diodes (LEDs). In this paper, high-brightness AlGaInP-based vertical LEDs (VLEDs) with surface PC (SPCLED) and embedded PC (EPCLED) were successfully fabricated. Compared with normal LED (NLED), photoluminescence intensities of SPCLED and EPCLED have been improved up to 30% and 60%, respectively. And the reflection patterns of SPCLED and EPCLED were periodic bright points array, showing the ability to control light in PC. Electroluminescent measurements show that three kinds of LEDs have similar threshold voltages. Simultaneously, the light output power (LOP) of SPCLED and EPCLED has been improved up to 24% and 11% at 200 mA, respectively, in comparison to NLEDs. But the LOP decays earlier for EPCLED due to the excessive heat production. Furthermore, it is demonstrated that the SPCLED and EPCLED luminous uniformity is better. This kind of high brightness PCLED is promising in improving the properties of all kinds of LEDs, especially mini LEDs and micro LEDs.