IEEE Photonics Technology Letters · 2021 · 28 citations · 29 references
EngineeringElectrical EngineeringMaterials ScienceElectronic MaterialsOptoelectronicsSemiconductor DevicesOptoelectronic DevicesPhotodetectorsPhotovoltaic DevicesPhotovoltaic MaterialsSolar CellsUltraviolet DetectorsDecay TimePhotodetectionResponse TimeSchottky Barrier CharacteristicsSchottky BarriersSchottky ContactsSchottky PhotodetectorsUltraviolet Photodetectors
In this study, we demonstrated self-powered fast-response ultraviolet (UV) detection based on a highly-rectifying graphene/GaN Schottky contact. The device was fabricated by mechanically transferring a monolayer graphene onto lightly-doped GaN and showed excellent Schottky behaviors, including a high rectification ratio (> 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> ), a close-to-unity ideality factor and a relatively high Schottky barrier height (1.01 eV). At zero bias, the graphene/GaN Schottky photodiodes exhibited a strong photovoltaic response to UV illumination with a competitively short rise/decay time of 221/546 μs. A trap-associated photoconductive mechanism started to dominate the device's response when its bias went beyond -1 V, which could be identified from the suddenly increased responsivity and response time.
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High-Detectivity Polymer Photodetectors with Spectral Response from 300 nm to 1450 nm
Xiong Gong, Minghong Tong, Yangjun Xia et al. · Science · 2009 · 1.9K citations
A direct transfer of layer-area graphene
William Regan, Nasim Alem, Benjamín Alemán et al. · Applied Physics Letters · 2010 · 386 citations
Natural Sciences, Materials Engineering, Materials Science +11
Gain mechanism in GaN Schottky ultraviolet detectors
Or Katz, V. Garber, B. Meyler et al. · Applied Physics Letters · 2001 · 307 citations