Single‐Atom Quantum‐Point Contact Switch Using Atomically Thin Hexagonal Boron Nitride

Abstract

The first report of a quantized conductance atomic threshold switch (QCATS) using an atomically-thin hexagonal boron nitride (hBN) layer is provided. This QCATS has applications in memory and logic devices. The QCATS device shows a stable and reproducible conductance quantization state at 1·G₀ by forming single-atom point contact through a monoatomic boron defect in an hBN layer. An atomistic switching mechanism in hBN-QCATS is confirmed by in situ visualization of mono-atomic conductive filaments. Atomic defects in hBN are the key factor that affects the switching characteristic. The hBN-QCATS has excellent switching characteristics such as low operation voltage of 0.3 V, low "off" current of 1 pA, fast switching of 50 ns, and high endurance > 10⁷ cycles. The variability of switching characteristics, which are the major problems of switching device, can be solved by reducing the area and thickness of the switching region to form single-atom point contact. The switching layer thickness is scaled down to the single-atom (≈0.33 nm) h-BN layer, and the switching area is limited to single-atom defects. By implementing excellent switching characteristics using single-layer hBN, the possibility of implementing stable and uniform atomic-switching devices for future memory and logic applications is confirmed.