Role of ALD Al₂O₃ Surface Passivation on the Performance of p-Type Cu₂O Thin Film Transistors

Abstract

High-performance p-type oxide thin film transistors (TFTs) have great potential for many semiconductor applications. However, these devices typically suffer from low hole mobility and high off-state currents. We fabricated p-type TFTs with a phase-pure polycrystalline Cu₂O semiconductor channel grown by atomic layer deposition (ALD). The TFT switching characteristics were improved by applying a thin ALD Al₂O₃ passivation layer on the Cu₂O channel, followed by vacuum annealing at 300 °C. Detailed characterization by transmission electron microscopy-energy dispersive X-ray analysis and X-ray photoelectron spectroscopy shows that the surface of Cu₂O is reduced following Al₂O₃ deposition and indicates the formation of a 1-2 nm thick CuAlO₂ interfacial layer. This, together with field-effect passivation caused by the high negative fixed charge of the ALD Al₂O₃, leads to an improvement in the TFT performance by reducing the density of deep trap states as well as by reducing the accumulation of electrons in the semiconducting layer in the device off-state.