Spin blockade in capacitively coupled quantum dots

Abstract

The spin blockade in capacitively coupled quantum dots was discussed using local anodic oxidation (LAO) and electron beam lithography. The tunability of the interdot coupling as a function of top gate voltage and magnetic field was studied. It was observed that the spatial separation of edge channels in the leads was much smaller in LAO devices. The results show that the spin blockade is useful for spin detection in LAO based quantum dot devices.