Role of threading dislocations and point defects in the performance of GaN-based metal-semiconductor-metal ultraviolet photodetectors - Concepedia

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Role of threading dislocations and point defects in the performance of GaN-based metal-semiconductor-metal ultraviolet photodetectors

18

Citations

40

References

2020

Year

Abhishek Chatterjee, Shailesh K. Khamari, Ravi Kumar, S. Porwal, A. Bose, T. K. Sharma

Superlattices and Microstructures

Wide-bandgap SemiconductorElectrical EngineeringPoint DefectsEngineeringApplied PhysicsAluminum Gallium NitrideGan Power DeviceCategoryiii-v SemiconductorOptoelectronics

References

	Year	Citations

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