S. Porwal - Concepedia

Author

S. Porwal

Raja Ramanna Centre for Advanced Technology

Also Known As

Porwal, S., Porwal, Saakshi, S PORWAL, S Porwal, S. Porwal, Shreya Porwal, Shubham Porwal, Sudhakar Porwal

Publications

707

Citations

H-Index

Concepts

All Affiliations

Raja Ramanna Centre for Advanced Technology Homi Bhabha National Institute

About

S. Porwal is an author at Raja Ramanna Centre for Advanced Technology specializing in engineering, applied physics, and optoelectronics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	23	510
2	Applied Physics	15	23	510
3	Electrical Engineering	12	12	258
4	Natural Sciences	3	3	84
5	Chemistry	1	1	18

S. Porwal

Publications

565

Citations

H-Index

Page 1

	Year	Citations
Room temperature photoluminescence from ZnO quantum wells grown on (0001) sapphire using buffer assisted pulsed laser deposition Pankaj Misra, Teena Sharma, S. Porwal, Applied Physics Letters Optical MaterialsEngineeringLaser DepositionOptoelectronic DevicesLuminescence Property	2006	47
A versatile phenomenological model for the S-shaped temperature dependence of photoluminescence energy for an accurate determination of the exciton localization energy in bulk and quantum well structures V. K. Dixit, S. Porwal, S. D. Singh, Journal of Physics D Applied Physics Localized Excited StateEngineeringTemperature DependenceExcitation Energy TransferLuminescence Property	2014	46
Effect of two-step growth process on structural, optical and electrical properties of MOVPE-grown GaP/Si V. K. Dixit, Tapas Ganguli, T. K. Sharma, Journal of Crystal Growth Materials ScienceMaterials EngineeringElectrical EngineeringOptical MaterialsEngineering	2008	41
Photoluminescence study of β-Ga2O3 nanostructures annealed in different environments Ravindra Jangir, S. Porwal, Pragya Tiwari, Journal of Applied Physics Materials Scienceβ-Ga2o3 NanostructuresPhotoluminescenceEngineeringNanomaterials	2012	38
Effect of 60Co γ-ray irradiation on electrical properties of GaAs epilayer and GaAs p–i–n diode Shailesh K. Khamari, V. K. Dixit, Tapas Ganguli, Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms Semiconductor TechnologyElectrical EngineeringEngineeringγ-Ray IrradiationApplied Physics	2010	30
Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in Al x Ga1−x As/GaAs quantum wells by magneto-photoluminescence Subhomoy Haldar, V. K. Dixit, Geetanjali Vashisht, Scientific Reports	2017	30
Studies on MOVPE growth of GaP epitaxial layer on Si(001) substrate and effects of annealing V. K. Dixit, Tapas Ganguli, T. K. Sharma, Journal of Crystal Growth Materials EngineeringMaterials ScienceEngineeringApplied PhysicsMovpe Growth	2006	28
Absorption edge determination of thick GaAs wafers using surface photovoltage spectroscopy T. K. Sharma, S. Porwal, Ravi Kumar, Review of Scientific Instruments EngineeringAbsorption SpectroscopyIntegrated CircuitsSemiconductor DeviceSemiconductors	2002	27
Correlation between surface modification and photoluminescence properties of β-Ga2O3 nanostructures Ravindra Jangir, S. Porwal, Pragya Tiwari, AIP Advances	2016	25
Observation of electron confinement in InP/GaAs type-II ultrathin quantum wells S. D. Singh, V. K. Dixit, S. Porwal, Applied Physics Letters Wide-bandgap SemiconductorEngineeringSemiconductor NanostructuresIi-vi SemiconductorNanoelectronics	2010	23

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