Publication | Closed Access
Modeling and Reduction of Radiated EMI in a GaN IC-Based Active Clamp Flyback Adapter
61
Citations
24
References
2020
Year
Electrical EngineeringEngineeringRf SemiconductorPower DeviceElectronic EngineeringAluminum Gallium NitridePower Semiconductor DeviceGan Power DeviceComputational ElectromagneticsPower ElectronicsMicroelectronicsGallium NitrideRadiated EmiElectromagnetic CompatibilityRadiated Electromagnetic Interference
This article first develops a radiated electromagnetic interference (EMI) model for a gallium nitride (GaN) integrated circuit (IC)-based active clamp flyback converter. Important capacitive couplings, which play a big role in the radiated EMI, are identified, extracted, and validated in the converter. The radiated EMI model is improved to characterize the impact of capacitive couplings. Based on the improved model, techniques to reduce capacitive couplings and the radiated EMI are proposed and experimentally validated.
| Year | Citations | |
|---|---|---|
Page 1
Page 1