Stacking the MoS2/GeSe2 vertical van der Waals heterostructure for memory device

Abstract

Recently, two-dimensional materials have shown great potential in the application of memories due to their atomic thickness and excellent electrical properties. Furthermore, van der Waals heterostructures consisting a variety of two-dimensional materials provide more possibilities for memory research. Here, we design a simple memory device based on the molybdenum disulfide/germanium diselenide (MoS2/GeSe2) van der Waals heterostructure, which exhibits a large memory window of about 10 V in the gate range of ±10 V. Its ratio of program/erase current reaches over 102 and remains after more than 2 × 103 s and 103 cycles, showing good stability and reliability. Compared to conventional floating gate memory, the device based on this structure provides promising advantages in the reduction of the device size and simplification of manufacturing.