Publication | Open Access
Brief review of silver sinter-bonding processing for packaging high-temperature power devices
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2020
Year
Materials ScienceElectrical EngineeringChip-scale PackageSinteringPowder MetallurgySilver SinteringEngineeringAdvanced Packaging (Semiconductors)Brief ReviewCorrect Sintering MethodsChip AttachmentHigh-temperature Power DevicesPressure-assisted SinteringElectronic PackagingSilver Sinter-bonding ProcessingMicroelectronicsThermal EngineeringMicrostructure
Silver sintering is receiving increasing attention due to its novel die-attach technique for high-temperature power electronics. Excellent thermal conductivity, high melting point/remelting temperature and low-temperature sintering behaviors of the silver sintered attachment meet the requirements of high-temperature applications for power devices, specifically SiC devices. The merits and demerits of the existing pressure-assisted sintering and pressure-less sintering techniques using nano-scale, micro-scale and micro-nano-scale hybrid silver sintered materials are separately presented. The emerging rapid sintering approaches, such as the electric-assisted approach, are briefly introduced and the technical outlook is provided. In addition, the study highlights the importance of creating a brief resource guide on using the correct sintering methods.