Industrial, Screen-Printed Double-Side Contacted Polo Cells

Abstract

We demonstrate an industrial double-side-contacted, screen-printed large area cell with POLO junctions on both sides and an in-house-measured energy conversion efficiency of 22.3 % (A = 244.15 cm2, Voc =714 mV, FF= 81.1 %, Jsc =38.5 mA/cm2). Most remarkably, this cell shows a very low series resistance < 0.05 Ωcm2, which supports previous observations of low specific junction resistance for the POLO scheme. The current limitations of the cell are (i) the low short-circuit current due to parasitic absorption in the rather thick poly-Si (30 nm), as well as in the ITO, (ii) deterioration of the recombination behavior upon TCO sputtering, and (iii) shunts near the edge due to non-adapted TCO edge-exclusion.