AIP Advances · 2020 · 12 citations · 43 references
Natural SciencesMaterials SciencePhysicsCondensed Matter PhysicsElectronic MaterialsSemiconductor MaterialsElectronic Band StructureMagnetic Properties Of SolidsMagnetism In SolidsSpintronicsTopological MaterialsDensity RatioHall Effect MeasurementsMagnetoresistanceTopological Band StructureTopological Insulators
Large unsaturated magnetoresistance (XMR) with magnitude ∼103% is observed in topological insulator candidate TaSe3 from our high field (up to 38 T) measurements. Two oscillation modes, associated with one hole pocket and two electron pockets in the bulk, respectively, are detected from our Shubnikov-de Hass measurements, consistent with our first-principles calculations. With the detailed Hall measurements performed, our two-band model analysis exhibits an imperfect density ratio nh/ne ≈ 0.9 at T < 20 K, which suggests that the carrier compensations account for the XMR in TaSe3.
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