Bandgap and strain engineering in epitaxial rocksalt structure (Ti<sub>0.5</sub>Mg<sub>0.5</sub>)<sub>1−x</sub>Al<sub>x</sub>N(001) semiconductors

Baiwei Wang, Minghua Zhang, Peijiao Fang, S. V. Khare, Daniel Gall

Journal of Materials Chemistry C · 2020 · 13 citations · 84 references

Concepts

Abstract

The model system (Ti<sub>0.5</sub>Mg<sub>0.5</sub>)<sub>1−x</sub>Al<sub>x</sub>N is used to demonstrate the tunability of both bandgap and strain state in rocksalt-structure nitride semiconductors.

References

84