Analysis of 1.2 kV SiC SWITCH-MOS after Short-circuit Stress

Abstract

In this study, the authors investigated residual damage in a 1.2 kV SWITCH-MOS after application of short-circuit stress. After the stress application, corresponding to about 80 % of the SWITCH-MOS withstanding time, the leakage current in the forward blocking state dramatically increased. It was found that the SBD regions in the SWITCH-MOS were affected by the high lattice temperature during the short-circuit stress, which exceeded the fabrication temperature of the Schottky metal layer, meaning that the SBD region could suffer physical damage.