2020 · 32 citations · 0 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesDevice DriversGate Drive CircuitsIntegrated Circuit DesignIntegrated Circuit DevicesPower ManagementWide-bandgap Semiconductor DevicesGallium NitrideGallium Nitride (Gan) MaterialsGallium Nitride Power DevicesGallium Nitride Power ElectronicsSelf-biasingSlew RateSlew Rate ControlWide Bandgap Semiconductor Applications
The proposed monolithically integrated 12V Gallium Nitride (GaN) driver utilizes a domino bootstrapping technique to an on-chip 650V enhancement mode Gallium Nitride (eGaN) in a GaN process. The proposed self-biasing loop (SBL) reduces the quiescent current to 120μA and achieves 96% high efficiency. Furthermore, derivative-voltage divided by derivative-time (dV/dt) controller with a dual current supply (DCS) technique is proposed to modulate the slew rate of eGaN HEMT from 53.3V/ns to 12.5V/ns.