Van der Waals Semiconductors: Infrared Permittivity of the Biaxial van der Waals Semiconductor α‐MoO₃ from Near‐ and Far‐Field Correlative Studies (Adv. Mater. 29/2020)

Abstract

In article number 1908176, Joshua D. Caldwell, Alexey Y. Nikitin, Pablo Alonso-González, and co-workers extract the IR permittivity of the biaxial crystal α-MoO3 by correlative far- and near-field measurements, using FTIR reflectance spectroscopy and s-SNOM polariton interferometry, thus providing both an accurate permittivity model and a novel approach to extracting dielectric functions of nanomaterials. Moreover, through density functional theory, insights into the vibrational states dictating such permittivity are revealed.