MgZnO Thin Film Transistors on Glass With Blocking Voltage of 900 V

Abstract

High voltage thin film transistor (HVTFT) built on glass can be used for distributed micro-inverters in the emerging applications, such as the building-integrated photovoltaics (BIPV) and smart glass. We report an HVTFT with a center-symmetric circular configuration which is built on a glass substrate at low temperature. The device is composed of a magnesium zinc oxide (MZO) based channel and a high- <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\kappa $ </tex-math></inline-formula> stacked gate dielectric layer of aluminum oxide/silicon dioxide (Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /SiO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ). This MZO HVTFT enables a blocking voltage of 900 volts. The high blocking capability is attributed to the lower gate leakage current through the stacked dielectric layer. The device under 10V drain bias shows an on/off current ratio over 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> .