Importance and Requirement of Frequency Band Specific RF Probes EM Models in Sub-THz and THz Measurements up to 500 GHz

Abstract

In this letter, we present on-silicon structures on-wafer measurements up to 500 GHz and a comprehensive electromagnetic (EM) simulation analysis to understand nonideal behavior in the measured data. The EM simulations are performed in such a way that the simulation setup remains very close to the physical measurement environment where a faithful EM model of the RF probes is an essential requirement. In this process, four different commercial RF probes used during measurements in the frequency bands 1-110 GHz, 140-220 GHz, 220-325 GHz, and 325-500 GHz are closely designed in the EM simulator. We also highlight the importance of the frequency band specific probe models to develop a deep understanding of the problems encountered in the sub-THz and THz measurements.