Performance Limits of III–V Barrier Detectors

Temperature dependence of the energy gap in semiconductors

Y. P. Varshni · Physica · 1967 · 5.3K citations

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Physics of Semiconductor Devices

Samarth Jain, S. Radhakrishna · 1987 · 4.2K citations

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Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb

Elizabeth H. Steenbergen, Blair C. Connelly, Grace D. Metcalfe et al. · Applied Physics Letters · 2011 · 299 citations

Ii-vi Semiconductor, Photonics, Photoluminescence +14

“Rule 07” Revisited: Still a Good Heuristic Predictor of p/n HgCdTe Photodiode Performance?

W. E. Tennant · Journal of Electronic Materials · 2010 · 203 citations

Electrical Engineering, Engineering, Computer Engineering +5

"XB n " barrier photodetectors for high sensitivity and high operating temperature infrared sensors

P. C. Klipstein · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2008 · 202 citations

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