Thin film transistors based on ultra-wide bandgap spinel ZnGa2O4

Abstract

We report on thin film transistors (TFTs) based on spinel ZnGa2O4 (ZGO) that was recently spotlighted as an ultra-wide bandgap oxide semiconductor. The ZGO layers were grown in a spinel structure by pulsed laser deposition on the cubic spinel MgAl2O4 (MAO) as well as on cubic MgO substrates while changing the Zn/Ga ratio. The compressive strained epitaxial growth of ZGO on MgAl2O4 (100) and the tensile strained epitaxial growth of ZGO on MgO (100) without any misfit or threading dislocations were confirmed by the reciprocal space map and cross-sectional transmission electron microscopy. The electrical transport properties were demonstrated through TFTs based on ZGO as the channel layer, Al2O3 as the gate oxide, and Sn-doped In2O3 as the source, drain, and gate electrodes. When the Zn/Ga ratio is slightly lower than the ideal value of 0.5 on MgO substrates, the ZGO TFT showed the highest mobility of 5.4 cm2/V s. The ION/IOFF ratio and subthreshold swing (S) value are 4.5 × 108 and 0.19 V/dec, respectively.